About an ATI 5770 on my current PC?

About an ATI 5770 on my current PC? Topic: Atx case specs
June 25, 2019 / By Babs
Question: My Pc is somewhat outdated, and i was wondering if to buy a new PC o just buy the Graphics card with the old PC my current specs are as follows : AMD Athlon X2 Dual Core 5800, 4 Gig Ram DDR2, Windows 7 and a GT5400 Nvidia, 254 Watt Power Supply ATX also would the 5770 be bottle necked? if i'm using the right terminology
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Best Answers: About an ATI 5770 on my current PC?

Acheflour Acheflour | 8 days ago
If you have the knowledge to upgrade your Powersupply as well as Graphics card then it should be good. The 5770 will NOT be bottlenecked. It might be, but if it is, there won't be much of a difference. You most DEFINATALY need to upgrade your Power Supply for the Graphics Card to run on your computer. Most powersupplys are ATX and you have the basic ATX case I assume. You should just upgrade, your comp specs really aren't that bad at all other then the graphics card. When ugprading the powersupply go with one thats 20+4 to ensure that it will fit. Goodluck, i have this page bookmarked so if you want to ask a question ask. Do you have a steam?
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We found more questions related to the topic: Atx case specs

Acheflour Originally Answered: Will a hd 5770 fit in a mid sized case?
Mid Towers will hold most video cards. The Radeon HD 5770, being less than 9.6" in length (the width of an ATX motherboard) will fit in all of them. A few very long, very high end video cards might have length issues with mid-towers, but that's not the case here.
Acheflour Originally Answered: Will a hd 5770 fit in a mid sized case?
I'm with Kyle here without knowing the exact case you have i can not give you a good answer but i can give you a good guess ...yes it should fit ....but it is just a guess without more details sorry i could not be of more help too you
Acheflour Originally Answered: Will a hd 5770 fit in a mid sized case?
Generally speaking, yes. However it depends on what size Mid-Tower you get. Some are almost as big as full towers. Please List the cases you are interested in buying for more help.

Acheflour Originally Answered: Doubt in BJT in BJT Ie=Ib+Ic ; Ie-emitter current; Ib-base current; Ic-collector current?
Hi 1) bi polar junction transistors are not constructed i the way you describe them. it starts life a single slice of either germanium or silicon this being the emitter region it is doped with a large dose to make it emit electrons a small bead of the alternative material is added this acts as a switch allowing current flow through to the collector terminal. without current flow between emitter and base no current flows to the collector. now we have the real issue these devices where never made with much precision so doping tends to be haphazard at best. so there is no guarantee of gain in the device Hfe. the parameter is just pure luck that is why when a matched pair is required it takes loads of testing to find two approximately the same gain. so the cost of sorting through several devices takes time so this needs to be paid for. 2) now we come to your question with power transistors like those mounted in the T03 case this is a thermal device so in order to dissipate the heat the collector is usually what is bonded to the case. so heat can be transferred away from the transistor as current flow generates heat. the device suffers from problem of the junctions being likely to breakdown due to the heat being generated which causes further current flow this does cause thermal runaway which usually destroys the device if the heat-sink is not effective in removing heat from the junction. so making the collector region larger is an attempt to remedy the heat transfer issue. 3 ) the emitter region is the part where electrons holes and electrons have to be emitted from in order to reach the base connection the terminal which controls current flow and the collector region. remember these things are constructed in a rather haphazard way so no definite gain factors are possible so being just a gain of 2 -3 times up to some 100- 4000 times so issues with current gain are a real problem. some of the early devices failed from the moment they where put into a circuit due the doping issues they simply destroyed themselves. with thermal runaway. or poor junctions i,e. high resistance joints where the method of making them failed due to the process being below temperature. so fusion did or did not take place. so these junction did not become formed. back in the early 1960's when i was a teen MULLARD produced a book describing how a transistor is made and constructed which explains all the modes of the different circuits and does it's best in scientific ways to explain transistor action, and ways heavily on the subject of thermal runaway. and ways to prevent it one idea which dominates the current flow is a emitter resistor of a value less that one ohm which is rated at about 5 watts which burns up before a npn device destroys itself. so disconnecting the supply from the device. when building circuits these days FET's do give better working circuits due to the inherent properties of negative temperature coefficients which shuts the device off when it starts to get hot. Gain is more control able as the control is just the presents of a voltage at the gate shutting off current flow from the source to the drain, unlike the enhancement of the collector and base currents drawing current from the emitter region causing the thermal runaway. in the bipolar transistors.
Acheflour Originally Answered: Doubt in BJT in BJT Ie=Ib+Ic ; Ie-emitter current; Ib-base current; Ic-collector current?
1) If you put the load in the emitter you will have a slightly higher current, but the voltage gain is only about 1. The collector and emitter currents are almost the same since beta is large, so the increase in Ie isn't worth worrying about. A common emitter amplifier has almost the same current gain as an emitter follower, but it has a much higher voltage gain.

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